HN1B01FU 2007-11-01 1 toshiba transistor silicon pnp epitaxial type (pct process) silicon npn epit axial type (pct process) HN1B01FU audio frequency general purpos e amplifier applications q1: z high voltage and high current : v ceo = ? 50v, i c = ? 150ma (max) z high h fe : h fe = 120~400 z excellent h fe linearity : h fe (i c = ? 0.1ma) / h fe (i c = ? 2ma) = 0.95 (typ.) q2: z high voltage and high current : v ceo = 50v, i c = 150ma (max) z high h fe : h fe = 120~400 z excellent h fe linearity : h fe (i c = 0.1ma) / h fe (i c = 2ma) = 0.95 (typ.) q1 absolute maximum ratings (ta = 25 c) marking characteristic symbol rating unit collector-base voltage v cbo ? 50 v collector-emitter voltage v ceo ? 50 v emitter-base voltage v ebo ? 5 v collector current i c ? 150 ma base current i b ? 30 ma jedec D eiaj D toshiba 2-2j1a weight: 6.8 mg unit in mm
HN1B01FU 2007-11-01 2 q2 absolute maximum ratings (ta = 25 c) equivalent circuit (top view) characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 ma base current i b 30 ma
HN1B01FU 2007-11-01 3 q1,q2 common absolute maximum ratings (ta = 25 c) characteristic symbol rating unit collector power dissipation p c * 200 mw junction temperature t j 125 c storage temperature range t stg ? 55~125 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/ ? derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * total rating q1 electrical characteristics (ta = 25 c) characteristic symbol test circuit test condition min typ. max unit collector cut-off current i cbo D v cb = ? 50v, i e = 0 D D ? 0.1 a emitter cut-off current i ebo D v eb = ? 5v, i c = 0 D D ? 0.1 a dc current gain h fe (note) D v ce = ? 6v, i c = ? 2ma 120 D 400 collector-emitter saturation voltage v ce (sat) D i c = ? 100ma, i b = ? 10ma D ? 0.1 ? 0.3 v transition frequency f t D v ce = ? 10v, i c = ? 1ma D 120 D mhz collector output capacitance c ob D v cb = ? 10v, i e = 0, f = 1mhz D 4 D pf q2 electrical characteristics (ta = 25 c) characteristic symbol test circuit test condition min typ. max unit collector cut-off current i cbo D v cb = 60v, i e = 0 D D 0.1 a emitter cut-off current i ebo D v eb = 5v, i c = 0 D D 0.1 a dc current gain h fe (note) D v ce = 6v, i c = 2ma 120 D 400 collector-emitter saturation voltage v ce (sat) D i c = 100ma, i b = 10ma D 0.1 0.25 v transition frequency f t D v ce = 10v, i c = 1ma D 150 D mhz collector output capacitance c ob D v cb = 10v, i e = 0, f = 1mhz D 2 D pf note: h fe classification y (y): 120~240, gr (g): 200~400 ( ) marking symbol
HN1B01FU 2007-11-01 4 q1 (pnp transistor)
HN1B01FU 2007-11-01 5 q2 (npn transistor)
HN1B01FU 2007-11-01 6 (q1, q2 common) s t ress. it i s th e respons ibilit y o f th e b uyer, w h en u tili z i ng toshiba pro d uc t s, t o comp l y w ith th e s t an d ar d s o f safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
|
